 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| www..com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load TC = 25C Maximum Ratings 1700 1700 20 30 20 10 40 ICM = 20 V CES = 1350 140 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V W C C C C C TO-268 (IXBT) G E (TAB) TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Capacitor discharge circuits Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1700 0.10 3.0 - 0.24 TJ = 25C TJ = 125C V %/K 5.0 V %/K 10 100 100 TJ = 125C 3.4 4.1 3.8 A A nA V V BVCES VGE(th) ICES IGES VCE(sat) IC = 250 A, VGE = 0 V Temperature Coefficent IC = 250 A, VCE = VGE Temperature Coefficent VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V (c) 2003 IXYS All rights reserved DS99048(05/03) IXBH 10N170 IXBT 10N170 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4.0 6.5 700 VCE = 25 V, VGE = 0 V, f = 1 MHz 40 12 30 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 6 10 35 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 56 28 500 1000 6 35 28 Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 56 0.7 600 1200 8 S P TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.89 K/W TO-268 Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC (TO-247) 0.25 K/W Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3.0 10 360 V A ns = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = IC90, VGE = 0 V, -diF/dt = 50 A/us = 100 V Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXBH 10N170 IXBT 10N170 Fig. 1. Output Characteristics @ 25 Deg. C 20 1 8 1 6 VG E = 17V 15V 13V 11V 9V 70 60 50 VG E = 17V 15V Fig. 2. Extended Output Characteristics @ 25 deg. C I C - Amperes 1 2 1 0 8 6 4 2 0 1 2 3 4 I C - Amperes 1 4 40 30 20 1 0 0 1 3V 11V 7V 9V 7V 5 6 0 2 4 6 8 1 0 1 2 1 4 1 6 V C E - Volts V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 20 1 8 1 6 1 4 VGE = 17V 15V 13V 11V 9V 1 .8 Fig. 4. Temperature Dependence of V CE(sat) VG E = 15V VC E (sat) - Normalized 1 .6 1 .4 1 .2 I C = 16A 1 0.8 0.6 I C = 32A I C - Amperes 1 2 1 0 8 6 4 2 0 1 2 3 4 5 6 7V I C = 8A -50 -25 0 25 50 75 1 00 1 25 1 50 7 8 V C E - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage 1 0 9 8 T J = 25 C 20 1 7.5 1 5 Fig. 6. Input Admittance VC E - Volts 7 6 5 4 3 5A 2 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 10A I C = 20A I C - Amperes 1 2.5 1 0 7.5 5 2.5 0 4 5 6 7 8 9 T J = 125 C 25 C -40 C V G E - Volts (c) 2003 IXYS All rights reserved V G E - Volts IXBH 10N170 IXBT 10N170 Fig. 7. Transconductance 9 8 7 T J = -40 C 25 C 125 C 25 30 Fig. 8. Forward Voltage Drop of Intrinsic Diode TJ = 25 C gf s - Siemens 6 5 4 3 2 1 0 0 2.5 5 7.5 1 0 1 2.5 1 5 1 7.5 20 I F - Amperes 20 1 5 1 0 5 0 0.5 1 1 .5 2 2.5 3 TJ = 125 C I C - Amperes V F - Volts Fig. 9. Dependence of Eoff on RG 1 5 1 4 1 3 I C = 20A 1 5 1 4 1 3 Fig. 10. Dependence of Eoff on IC T J = 125 C VG E = 15V VC E = 1360V E off - milliJoules E off - milliJoules 1 2 1 1 1 0 9 8 7 0 1 2 R G = 100 Ohms 1 1 1 0 9 8 7 R G= 10 Ohms TJ = 125 C VGE = 15V VC E = 1360V I C = 10A 20 R G - Ohms 40 60 80 1 00 1 0 1 2 1 4 1 6 1 8 20 I C - Amperes Fig. 11. Dependence of Eoff on Temperature 1 7 1 5 So lid lines - R G = 100 Ohms Dashed lines - R G = 10 Ohms 1 5 Fig. 12. Gate Charge 1 2 VC E = 600V I C = 10A I G = 10mA E off - milliJoules VG E - Volts 1 3 I C = 20A 1 1 9 7 5 0 25 50 75 1 00 1 25 1 50 VG E = 15V VC E = 1360V I C = 10A 9 6 3 0 0 5 1 0 1 5 20 25 30 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Q G - nanoCoulombs 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXBH 10N170 IXBT 10N170 Fig. 13. Maximum Transient Thermal Resistance 1 C i es 0.9 f = 1M Hz 0.8 Fig. 12. Capacitance 1 000 Capacitance - pF R (th) J C - (C/W) 0.7 0.6 0.5 0.4 1 00 C oes C res 1 0 0 5 1 0 1 5 20 25 30 35 40 0.3 0.2 1 1 0 1 00 1 000 V C E - Volts Pulse Width - milliseconds (c) 2003 IXYS All rights reserved |
Price & Availability of IXBH10N170
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |